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| IGBT MODULE CIRCUIT Single 600A 1200V OUTLINE DRAWING PHMB600B12 Dimension(mm) Approximate Weight : 650g MAXMUM RATINGS (Tc=25C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR M4 M8 PHMB600B12 1200 +/ - 20 600 1200 2770 -40 to +150 -40 to +125 2500 3 1.4 10.5 Unit V V A W C C V N*m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=600A,VGE=15V VCE=5V,IC=600mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 1.0 ohm RG= 1.0 ohm VGE= +/- 15V Min. 4.0 - Typ. 1.9 33000 0.25 0.40 0.25 0.80 Max. 12.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10 Unit mA A V V pF s FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 600 1200 Unit A Typ. 1.9 0.25 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=600A,VGE=0V IF=600A,VGE=-10V,di/dt=1200A/s Min. - Max. 2.4 0.35 Unit V s Unit C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - Max. 0.044 0.085 PHMB600B12 Fig.1- Output Characteristics (Typical) 1200 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25 16 TC=25 IC=300A 1200A VGE=20V 1000 12V 10V Collector to Emitter Voltage V CE (V) 15V 14 12 10 8 6 4 2 0 600A Collector Current I C (A) 800 9V 600 400 8V 200 7V 0 0 2 4 6 8 10 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) Gate to Emitter Voltage VGE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) 800 700 600 500 400 16 TC=125 IC=300A 1200A Collector to Emitter Voltage V CE (V) 600A 12 10 8 6 4 2 0 Collector to Emitter Voltage V CE (V) 14 RL=1 TC=25 14 Gate to Emitter Voltage VGE (V) 12 10 8 VCE=600V 300 6 400V 200 100 0 0 800 1600 2400 3200 4000 200V 4 2 0 4800 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 200000 100000 Fig.6- Collector Current vs. Switching Time (Typical) 1.6 Cies 50000 VGE=0V f=1MHZ TC=25 1.4 1.2 VCC=600V RG=0.82 VGE=15V TC=25 20000 10000 5000 2000 1000 500 200 Switching Time t (s) Capacitance C (pF) tOFF Coes 1 0.8 0.6 0.4 0.2 0 tf Cres tON tr 0 100 200 300 400 500 600 0.1 0.2 0.5 1 2 5 10 20 50 100 200 Collector to Emitter Voltage VCE (V) Collector Current IC (A) PHMB600B12 Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical) 10 5 1200 (Typical) TC=25 TC=125 VCC=600V IC=600A VGE=15V TC=25 1000 toff ton 2 1 0.5 Forward Current I F (A) Switching Time t (s) 800 tr 600 tf 0.2 0.1 0.05 400 200 0.1 0.2 0.5 1 2 5 10 20 0 0 1 2 3 4 Series Gate Impedance RG () Forward Voltage VF (V) Fig.9- Reverse Recovery Characteristics (Typical) 1000 Fig.10- Reverse Bias Safe Operating Area (Typical) 5000 2000 1000 500 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) IF=600A TC=25 500 RG=0.82 VGE=15V TC125 Collector Current I C (A) 1200 1800 2400 3000 3600 300 200 trr 200 100 50 20 10 5 2 1 0.5 100 IRrM 50 20 10 0 600 0.2 0 400 800 1200 1600 -di/dt (A/s) Collector to Emitter Voltage V CE (V) fig11-Tansient Thermal Impedance 2x10 -1 Tansient Thermal Impedance Rth (J-C) (C/W) 1x10 5x10 2x10 -1 FRD IGBT -2 -2 1x10 5x10 -2 -3 2x10 -3 1x10 -3 Tc=25 1 Shot -5 -4 -3 -2 -1 1 5x10 2x10 -4 -4 10 10 10 10 10 1 10 Time t s |
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